Journal of Nanomedicine & Nanotechnology

Offset polarization in BNdT thin films for the application of RAM devices

5^th International Conference on Nanotek & Expo

November 16-18, 2015 San Antonio, USA

Khalid Mujasam Batoo

King Saud University, Saudi Arabia.

Posters-Accepted Abstracts: J Nanomed Nanotechnol

Abstract:

The current surge of interest in multiferroic materials showing magneto-electric coupling due to the presence of both magnetic and ferroelectric ordering is fuelled by both the potential technological applications and the underlying new physics [1-3]. The magneto-electric coupling (ME) provides an additional degree of freedom in the designing of actuators, sensors, and data storage devices [3]. From the fundamental physics point of view, the coexistence of ferroelectric and magnetic order is contraindicated [1], as the former requires empty �??d�?? orbitals for the off-centre displacement of cations responsible for ferroelectricity [4] while the latter results from partially filled d orbitals. The coexistence of such mutually exclusive phenomena in some compounds has been attributed to new mechanisms of ferroelectricity, such as lone pair stereochemical activity of the �??A�?? site cation [1-3,], loss of inversion symmetry due to spiral magnetic ordering [1-3], and change in geometrical arrangement of ions [1,2] After an introduction of the basic ideas and how the work relates to other work, providing some relevant References in short format [1, 2], present detailed descriptions of methods, device structures, and examples of specific results, whether experimental or theoretical. If absolutely necessary, these results can be supported by figures and/or tables, but only in strict compliance with space limits and preserving clarity. Multiferroic materials simultaneously present both ferroelectric and spin orders, which enable them to have potential applications in both magnetic and ferroelectric devices. So, the development of such type of material, which has magneto-electric properties in same phase at room temperature, is the milestone for modern technology. These materials have potential applications in memory devices where one can write ferroelectrically and read magnetically or vice versa. We report the multiferroic properties of polycrystalline homogeneous Bi4-xNdxTi3O12 (BNdT) ferroelectric thin films sandwiched in Pt electrodes by chemical solution deposition. Dense and uniform BNdT films were achieved by rapid thermal annealing the spin-on films at 700 °C for 3 min in oxygen environment. All the samples exhibited well-saturated hysteresis loops with remenant polarization (2Pr) increasing from 36.22 μC/cm2 (x = 0.0) to 109.86 μC/cm2 (x = 0.1), respectively, while the coercive field (2EC) = 64.6 kV/cm remained unchanged for all compositions at room temperature after exposing the films using Swift heavy ion irradiation. Polarization offset was observed in the compositionally graded ferroelectric thin films as a function of temperature. Polarization offset was notable after 100 °C and increased with increasing temperature which may be related to thermionic charge injection, which is asymmetric to top and bottom electrodes.

Biography :

Email: kbatoo@ksu.edu.sa