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Electrical study of organic field effect transistors grown on flexible substrates
6th Global Experts Meeting on Nanomaterials and Nanotechnology
April 21-23, 2016 Valencia, Spain
Davoud Dastan
Savitribai Phule Pune University, India
Scientific Tracks Abstracts: J Nanomed Nanotechnol
Abstract:
Organic field effect transistors (FET) have been prepared on flexible substrates. A gate dielectric layer consists of organic and inorganic composite materials have been used for the enhancement of electrical characteristics of the FET. Nano-particulates titania were embedded into poly vinyl alcohol (PVA) and ammonium dichromate. The cross-linking of PVA with ammonium dichromate (PVA-ad) was performed with the exposure of ultraviolet (UV) irradiation. The solution of PVAad+TiO2 was spun onto rigid substrates. The gold contacts were made using thermal evaporation on top of the samples. In order to measure the electrical features of FET�??s, an active layer of copper phthalo-cyanine (CuPc6) was deposited andthe output characteristics of the devices were investigated using semiconductor parameter analyzer. The surface morphology of the prepared FET�??s was studied by means of Atomic Force Microscopic (AFM).The output characteristics results of devices exposed to UV light revealed higher mobility, on/off ratio, and threshold voltage with respect to the pristine samples.Moreover, devices with PVAad+TiO2 as gate dielectric exhibited better electrical performance compared to those with PVA-ad as gate dielectric. The AFM images illustrated higher surface roughness for irradiated devices. Additionally, granular and uniform morphology with grain sizes in the range of 20-50 nm were observed for FET devices.
Biography :
Davoud Dastan has completed his MSc from Savitribai Phule Pune University and is currently a PhD student in the same University. He has published more than 15 papers in reputed journals and also participated in more than 30 international conferences.
Email: d.dastan@yahoo.com